* Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to reduce I/O power 8,192 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type
H57V2582GTR-75L Datasheet (267.34 KB)
H57V2582GTR-75L
Hynix Semiconductor
267.34 KB
256mb synchronous dram based on 8m x 4bank x8 i/o.
www.DataSheet4U.com 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of.
📁 Related Datasheet
H57V2582GTR-75C 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O (Hynix Semiconductor)
H57V2582GTR-75I 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O (Hynix Semiconductor)
H57V2582GTR-75J 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O (Hynix Semiconductor)
H57V2582GTR-60C 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O (Hynix Semiconductor)
H57V2582GTR-60I 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O (Hynix Semiconductor)
H57V2582GTR-60J 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O (Hynix Semiconductor)
H57V2582GTR-60L 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O (Hynix Semiconductor)
H57V2582GTR 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O (Hynix Semiconductor)
H57V2562GFR 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O (Hynix Semiconductor)
H57V2562GTR 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O (Hynix Semiconductor)
