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H5TQ1G83BFR-xxC, H5TQ1G63BFR-xxC Datasheet - Hynix Semiconductor

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H5TQ1G83BFR-xxC, H5TQ1G63BFR-xxC 1Gb DDR3 SDRAM

1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ1G43BFR-xxC H5TQ1G83BFR-xxC H5TQ1G63BFR-xxC http://www.DataSheet4U.com/ <.
The H5TQ1G43BFR-xxC, H5TQ1G83BFR-xxC and H5tQ1G63BFR-xxC are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for.

H5TQ1G63BFR-xxC_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: H5TQ1G83BFR-xxC, H5TQ1G63BFR-xxC. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H5TQ1G83BFR-xxC, H5TQ1G63BFR-xxC

Manufacturer:

Hynix Semiconductor

File Size:

924.94 KB

Description:

1Gb DDR3 SDRAM

Note:

This datasheet PDF includes multiple part numbers: H5TQ1G83BFR-xxC, H5TQ1G63BFR-xxC.
Please refer to the document for exact specifications by model.

Features

* and Ordering Information FEATURES
* VDD=VDDQ=1.5V +/- 0.075V
* Fully differential clock inputs (CK, CK) operation
* Differential Data Strobe (DQS, DQS)
* On chip DLL align DQ, DQS and DQS transition with CK transition
* DM masks write data-in at the both risin

Applications

* which requires large memory density and high bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes an

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