H5TQ1G83EFR-xxC Datasheet (SK Hynix)

H5TQ1G83EFR-xxC, 1Gb DDR3 SDRAM

The H5TQ1G6(8)3EFR-xxx series are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.

SK hynix Inc.

1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising

H5TQ1G83EFR-xxC Features

* and Ordering Information FEATURES

* DQ Power & Power supply : VDD & VDDQ = 1.5V +/0.075V

* DQ Ground supply : VSSQ = Ground

* Fully differential clock inputs (CK, CK) operation

* Differential Data Strobe (DQS, DQS)

* On chip DLL align DQ, DQS and DQS transitio