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H5TQ2G63BFR-xxC, H5TQ2G83BFR-xxI Datasheet - Hynix Semiconductor

H5TQ2G83BFR-xxI_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: H5TQ2G63BFR-xxC, H5TQ2G83BFR-xxI. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

H5TQ2G63BFR-xxC, H5TQ2G83BFR-xxI

Manufacturer:

Hynix Semiconductor

File Size:

582.76 KB

Description:

2gb ddr3 sdram.

Note:

This datasheet PDF includes multiple part numbers: H5TQ2G63BFR-xxC, H5TQ2G83BFR-xxI.
Please refer to the document for exact specifications by model.

H5TQ2G63BFR-xxC, H5TQ2G83BFR-xxI, 2Gb DDR3 SDRAM

The H5TQ2G83BFR and H5TQ2G63BFR are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.

Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and fa

2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ2G83BFR-xxC H5TQ2G83BFR-xxI H5TQ2G63BFR-xxC http://www.DataSheet4U.net/ H5TQ2G63BFR-xxI Hynix Semiconductor reserves the right to change products or specifications without notice.

Rev.

1.7 / Dec.

2010 1 datasheet pdf - http://www.DataSheet4U.net/ Revision History Revision No.

0.1 0.2 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 History Initial Release Added IDD Specification Add supported CL5 Modify the package outline with

H5TQ2G63BFR-xxC Features

* and Ordering Information FEATURES

* VDD=VDDQ=1.5V +/- 0.075V

* Fully differential clock inputs (CK, CK) operation

* 8banks

* Average Refresh Cycle (Tcase of 0 oC~ 95 oC)

* Differential Data Strobe (DQS, DQS) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC

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