H5TQ2G83DFR-xxI Datasheet - Hynix Semiconductor

H5TQ2G83DFR-xxI 2Gb DDR3 SDRAM

tions which requires large memory density and high bandwidth. Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data stro.

H5TQ2G83DFR-xxI Features

* and Ordering Information FEATURES

* VDD=VDDQ=1.5V +/- 0.075V

* Fully differential clock inputs (CK, CK) operation

* Differential Data Strobe (DQS, DQS)

* On chip DLL align DQ, DQS and DQS transition with CK transition

* DM masks write data-in at the both risin

H5TQ2G83DFR-xxI Datasheet (333.13 KB)