HY27UA081G1M Datasheet, Memory, Hynix Semiconductor

HY27UA081G1M Features

• Memory SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width.

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HY27UA081G1M

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Hynix Semiconductor

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📄 Datasheet

Description:

(hy27saxxx) 1gbit (128mx8bit / 64mx16bit) nand flash memory. of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 4) Add the description of

HY27UA081G1M Application

• Applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibili

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HY27UA081G1M

Hynix Semiconductor

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