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HY27UA161G1M, HY27SAxxx (HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

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Description

HY27UA(08/16)1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Mem.
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 4) Add the description of System Interface.

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This datasheet PDF includes multiple part numbers: HY27UA161G1M, HY27SAxxx. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
HY27UA161G1M, HY27SAxxx
Manufacturer
Hynix Semiconductor
File Size
729.47 KB
Datasheet
HY27SAxxx_HynixSemiconductor.pdf
Description
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Note
This datasheet PDF includes multiple part numbers: HY27UA161G1M, HY27SAxxx.
Please refer to the document for exact specifications by model.

Applications

* FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY VOLTAGE Sequential Row Read Option : HY27UAXX1G1M - 3.3V device: VCC = 2.7 to 3.6V 1.8V Operatio

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