Datasheet Details
Part number:
HY27UA1G1M
Manufacturer:
Hynix Semiconductor
File Size:
781.84 KB
Description:
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Features
* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY
HY27UA1G1M_HynixSemiconductor.pdf
HY27UA1G1M, 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 4) Add the description of System Interface Using /CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics 0.4 tCRY Before After 60 + tr 70 + tr tREA@ID Read 35 45 Jun.
01.
2004 Prelim
HY27UA(08/16)1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No.
0.0 0.1 1) Initial Draft 1) Add 1.8V Operation Product to Data sheet 1) Change AC Characteristics - tWP(25ns->40ns), tWC(50ns->60ns), - tRP(30ns->40ns), tRC(50ns->60ns), - tREADID(35ns->45ns) 1) Add Errata (3V Product) tWH Specification Relaxed value 0.3 2) Add Applicaiton Note Reset command must be issued when the controll
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