of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation with CE don't care 1) Change TSOP1,WSOP1,FBGA package dimension 0.6 - Change TSOP1,WSOP1,FBGA mechan
HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No.
0.0 0.1 Initial Draft Renewal Product Group History Draft Date Jul.
10.
2003 Dec.
08.
2003 Dec.
08.
2003 Remark Preliminary Preliminary Preliminary 0.2 Append 1.8V Operation Product to Data sheet www.DataSheet4U.com Insert Spare Enable function for GND Pin(#6) - In case of Reading or Programming, GND Pin(#6) should be
HY27US561M Features
* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY
HY27US561M_HynixSemiconductor.pdf
Datasheet Details
HY27US561M
Hynix Semiconductor
786.15 KB
256mbit (32mx8bit / 16mx16bit) nand flash.
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