HY514400B Datasheet - Hynix Semiconductor

HY514400B 1M x 4-Bit CMOS DRAM

This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this device to achieve high performance and low power dissi.

HY514400B Features

* are access time(50, 60 or 70ns) and package type(SOJ or TSOP-II) and power consumption (Normal or Low power with self refresh). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability. FEATURES Ÿ Fast Page Mode

HY514400B_HynixSemiconductor.pdf