HY531000A Datasheet (Hynix Semiconductor)

HY531000A, 1M X 1 Fast Page Mode

This family is a 1M bit dynamic RAM organized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAMs.

Fast Page mode offers high speed of random access memory within the same row.

The circuit and process design allow this device to achieve high performance and low power dissipation.

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HY531000A Features

* are access time(60, 70 or 80ns) and power consumption (Normal or Low power). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability. FEATURES Ÿ Fast Page Mode operation Ÿ Read-modify-write Capability Ÿ TTL com