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HY5012W Datasheet - HOOYI

HY5012W N-Channel Enhancement Mode MOSFET

HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 55 to 175 300 IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient .

HY5012W Datasheet (488.50 KB)

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Datasheet Details

Part number:

HY5012W

Manufacturer:

HOOYI

File Size:

488.50 KB

Description:

N-channel enhancement mode mosfet.

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HY5012W N-Channel Enhancement Mode MOSFET HOOYI

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