• Part: HY5012A
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 612.26 KB
Download HY5012A Datasheet PDF
HOOYI
HY5012A
HY5012A is N-Channel Enhancement Mode MOSFET manufactured by HOOYI.
- Part of the HY5012W comparator family.
Features - 125V/300A RDS(ON)=2.9 m  (typ.) @ VGS=10V - Avalanche Rated - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) Pin Description TO-247A-3L TO-3P-3L Applications - Power Management for Inverter Systems. Ordering and Marking Information N Channel MOSFET W HY5012 YYXXXJWW G A HY5012 YYXXXJWW G Package Code W : TO-247A-3L A : TO-3P-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant with Ro HS. HUAYI lead -free products meet or exceed the lead Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. .hymexa. V1.0 HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 55 to 175 300 IDM Pulsed Drain...