HY5012W - N-Channel Enhancement Mode MOSFET

HOOYI

General Description

S D G TO-247A-3L S D G TO-3P-3L Applications

Power Management for Inverter Systems.

Key Features

125V/300A RDS(ON)=2.9 m  (typ. ) @ VGS=10V.
Avalanche Rated.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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HY5012W n-channel enhancement mode mosfet by HOOYI - Datasheet Preview

Datasheet Details

Part number	HY5012W
Manufacturer	HOOYI
File Size	612.26 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY5012W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY5012W/A N-Channel Enhancement Mode MOSFET Features • 125V/300A RDS(ON)=2.9 m  (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247A-3L S D G TO-3P-3L Applications  Power Management for Inverter Systems. Ordering and Marking Information N Channel MOSFET W HY5012 YYXXXJWW G A HY5012 YYXXXJWW G Package Code W : TO-247A-3L A : TO-3P-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.