HY57V28820HCLT, HY57V28820HCT 4Banks x 4M x 8bits Synchronous DRAM

Hynix Semiconductor

Description

HY57V28820HC(L)T 4Banks x 4M x 8bits Synchronous DRAM 0.1 : Hynix Change 0.2 : Burst read single write mode correction Rev.0.2 / Aug.2001 1 HY57V.
The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory dens.

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HY57V28820HCLT Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V28820HCLT, HY57V28820HCT. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HY57V28820HCLT, HY57V28820HCT
Manufacturer: Hynix Semiconductor
File Size: 236.80 KB
Datasheet: HY57V28820HCT-HynixSemiconductor.pdf
Description: 4Banks x 4M x 8bits Synchronous DRAM
Note: This datasheet PDF includes multiple part numbers: HY57V28820HCLT, HY57V28820HCT.
Please refer to the document for exact specifications by model.

Applications

* which require large memory density and high bandwidth. HY57V28820HC(L)T is organized as 4banks of 4,194,304x8. HY57V28820HC(L)T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The dat

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HY57V28820HCT 4Banks 8bits Synchronous DRAM Hynix Semiconductor

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