HY57V64820HG Datasheet (Hynix Semiconductor) - 4 Banks x 2M x 8Bit Synchronous DRAM

HY57V64820HG, 4 Banks x 2M x 8Bit Synchronous DRAM

The Hynix HY57V64820HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V64820HG is organized as 4banks of 2,097,152x8.

HY57V64820HG is offering fully synchronous operation referenced to a positive e

HY57V64820HG Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation