Datasheet Specifications
- Part number
- HY57V64820HG
- Manufacturer
- Hynix Semiconductor
- File Size
- 172.94 KB
- Datasheet
- HY57V64820HG_HynixSemiconductor.pdf
- Description
- 4 Banks x 2M x 8Bit Synchronous DRAM
Description
HY57V64820HG 4 Banks x 2M x 8Bit Synchronous DRAM .
Features
* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operationApplications
* which require large memory density and high bandwidth. HY57V64820HG is organized as 4banks of 2,097,152x8. HY57V64820HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data pathsHY57V64820HG Distributors
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