HY5S2B6DLF-BE 4Banks x 2M x 16bits Synchronous DRAM

Hynix Semiconductor

Description

HY5S2B6DLF(P)-xE 4Banks x 2M x 16bits Synchronous DRAM Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No.0.1 0.2 0.3 .
and is subject to change without notice.

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Datasheet Specifications

Part number: HY5S2B6DLF-BE
Manufacturer: Hynix Semiconductor
File Size: 791.81 KB
Datasheet: HY5S2B6DLF-BE_HynixSemiconductor.pdf
Description: 4Banks x 2M x 16bits Synchronous DRAM

Features

* Standard SDR Protocol Internal 4bank operation
* Voltage : VDD = 1.8V, VDDQ = 1.8V
* LVCMOS compatible I/O Interface
* Low Voltage interface to reduce I/O power
* Low Power Features - PASR(Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Stre

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HY5S2B6DLF-BE 4Banks 16bits Synchronous DRAM Hynix Semiconductor

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