HY5S2B6DLFP-SE, HY5S2B6DLF-BE Datasheet - Hynix Semiconductor

HY5S2B6DLFP-SE 4Banks x 2M x 16bits Synchronous DRAM

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3 / Feb. 2005 1 1HY5S2B6DLF(P)-xE 4Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix Mobile SDR is suited for non-PC applica.

HY5S2B6DLFP-SE Features

* Standard SDR Protocol Internal 4bank operation

* Voltage : VDD = 1.8V, VDDQ = 1.8V

* LVCMOS compatible I/O Interface

* Low Voltage interface to reduce I/O power

* Low Power Features - PASR(Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Stre

HY5S2B6DLF-BE_HynixSemiconductor.pdf

HY5S2B6DLFP-SE Datasheet Preview — This datasheet PDF includes multiple part numbers: HY5S2B6DLFP-SE, HY5S2B6DLF-BE. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HY5S2B6DLFP-SE, HY5S2B6DLF-BE

Manufacturer:

Hynix Semiconductor

File Size:

791.81 KB

Description:

4banks x 2m x 16bits synchronous dram.

Note:

This datasheet PDF includes multiple part numbers: HY5S2B6DLFP-SE, HY5S2B6DLF-BE.
Please refer to the document for exact specifications by model.

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HY5S2B6DLFP-SE HY5S2B6DLF-BE 4Banks 16bits Synchronous DRAM Hynix Semiconductor

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