HY5S7B2ALFP-6 Datasheet - Hynix Semiconductor

HY5S7B2ALFP-6, 512M (16Mx32bit) Mobile SDRAM

512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.
and is subject to change without notice.

datasheet Preview Page 1 from Datasheet4u.com

HY5S7B2ALFP-6_HynixSemiconductor.pdf

HY5S7B2ALFP-6 Datasheet Preview — Preview of HY5S7B2ALFP-6 PDF

Datasheet Details

Part number:

HY5S7B2ALFP-6

Manufacturer:

Hynix Semiconductor

File Size:

1.84 MB

Description:

512M (16Mx32bit) Mobile SDRAM

Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During b

Applications

* which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304x32. Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data

HY5S7B2ALFP-6 Distributors

📁 Related Datasheet

HY5-P HY50-P HY5002 HY5012A HY5012W HY50P

📌 All Tags

HY5S7B2ALFP-6 512M 16Mx32bit Mobile SDRAM Hynix Semiconductor

Hynix Semiconductor HY5S7B2ALFP-6-like datasheet