HY62WT08081E Datasheet - Hynix Semiconductor

HY62WT08081E HY62WT08081E Series 32Kx8bit CMOS SRAM

and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 04 / May . 2001 Hynix Semiconductor HY62WT08081E Series DESCRIPTION The HY62WT08081E is a high-speed, low power and 32,786 X 8-bits CMOS .

HY62WT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power Slow SRAM Revision History Revision No 00 01 History Initial Revised - Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V : 15uA => 20uA Revised - Marking Information Change : SOP Type - Voh Limit Change : 2.4V => 2.2V @2.7~3.6V Changed Logo - HYUNDAI -> hynix - Marking Information Change Revised - Iccdr Limit Add : 2uA @40°C Draft Date Feb.05.2001 Feb.13.2001 Remark Preliminary Final 02 Feb.21.2001 Final 03 Apr.

HY62WT08081E Features

* Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(LL-part) - 2.0V(min.) data retention

* Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Sta

HY62WT08081E Datasheet (205.31 KB)