HY62WT08081E Datasheet (Hynix Semiconductor) - HY62WT08081E Series 32Kx8bit CMOS SRAM

HY62WT08081E, HY62WT08081E Series 32Kx8bit CMOS SRAM

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Rev 04 / May .

2001 Hynix Semiconductor HY62WT08081E Series DESCRIPTION The HY62WT08081E is a high-speed, low power and 32,786 X 8-bits CMOS

HY62WT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power Slow SRAM Revision History Revision No 00 01 History Initial Revised - Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V : 15uA => 20uA Revised - Marking Information Change : SOP Type - Voh Limit Change : 2.4V => 2.2V @2.7~3.6V Changed Logo - HYUNDAI -> hynix - Marking Information Change Revised - Iccdr Limit Add : 2uA @40°C Draft Date Feb.05.2001 Feb.13.2001 Remark Preliminary Final 02 Feb.21.2001 Final 03 Apr

HY62WT08081E Features

* Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(LL-part) - 2.0V(min.) data retention

* Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Sta