HY63V8400 Datasheet - Hynix Semiconductor

HY63V8400 512K x 8-Bit CMOS Fast SRAM

The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than. address access time at read cycle. The device is fabricated using Hyundai's ad.

HY63V8400 Features

* Single 3.3V±0.3V Power Supply Fully static operation and Tri-state output TTL compatible inputs and outputs Low data Retention Voltage: - 2.0V(min)

* L-ver. Only

* Center Power/Ground Pin Configuration

* Standard pin configuration - 36pi

HY63V8400_HynixSemiconductor.pdf