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HY67V161610D

2 Banks x 512K x 16 Bit Synchronous DRAM

HY67V161610D Features

* Single 3.0V to 3.6V power supply Note1)

* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequence Burst All device pins are compatible with LVTTL interface J

HY67V161610D General Description

and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied Rev. 3.6/Apr.01 HY57V161610D P IN C O N F IG U R A T IO N VDD DQ0 DQ1 VSSQ DQ2 DQ3 VDDQ DQ4 DQ5 VSSQ DQ6 DQ7 VDDQ LDQM WE CAS RAS CS A11 A10.

HY67V161610D Datasheet (101.43 KB)

Preview of HY67V161610D PDF

Datasheet Details

Part number:

HY67V161610D

Manufacturer:

Hynix Semiconductor

File Size:

101.43 KB

Description:

2 banks x 512k x 16 bit synchronous dram.
www.DataSheet4U.com HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM D E S C R IP T IO N THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Syn.

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TAGS

HY67V161610D Banks 512K Bit Synchronous DRAM Hynix Semiconductor

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