HY67V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor

Description

www.DataSheet4U.com HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM D E S C R IP T IO N THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Syn.
and is subject to change without notice.

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Datasheet Specifications

Part number: HY67V161610D
Manufacturer: Hynix Semiconductor
File Size: 101.43 KB
Datasheet: HY67V161610D_HynixSemiconductor.pdf
Description: 2 Banks x 512K x 16 Bit Synchronous DRAM

Features

* Single 3.0V to 3.6V power supply Note1)
* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequence Burst All device pins are compatible with LVTTL interface J

Applications

* which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are inte

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HY67V161610D Banks 512K Bit Synchronous DRAM Hynix Semiconductor

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