Datasheet Details
- Part number
- H5AN4G8NMFR-xxC
- Manufacturer
- Hynix Semiconductor
- File Size
- 463.33 KB
- Datasheet
- H5AN4G8NMFR-xxC-HynixSemiconductor.pdf
- Description
- 4Gb DDR4 SDRAM
H5AN4G8NMFR-xxC Description
4Gb DDR4 SDRAM 4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5AN4G8NMFR-xxC H5AN4G6NMFR-xxC * SK hynix reserves the right to change pro.
The H5AN4G8NMFR-xxC and H5AN4G6NMFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications wh.
H5AN4G8NMFR-xxC Features
* and Ordering Information
FEATURES
* VDD=VDDQ=1.2V +/- 0.06V
* Fully differential clock inputs (CK, CK) operation
* Differential Data Strobe (DQS, DQS)
* On chip DLL align DQ, DQS and DQS transition with CK transition
* DM masks write data-in at the both risi
H5AN4G8NMFR-xxC Applications
* which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes
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