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H5TQ1G43TFR-xxC 1Gb DDR3 SDRAM

H5TQ1G43TFR-xxC Description

1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ1G43TFR-xxC H5TQ1G83TFR-xxC *Hynix Semiconductor reserves the right to .
The H5TQ1G43TFR-xxC, H5TQ1G83TFR-xxC are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory app.

H5TQ1G43TFR-xxC Features

* and Ordering Information FEATURES
* VDD=VDDQ=1.5V +/- 0.075V
* 8banks
* Fully differential clock inputs (CK, CK) operation
* Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
* Differential Data Strobe (DQS, DQS) - 7.8 µs at 0oC ~ 85 oC
* On chip DL

H5TQ1G43TFR-xxC Applications

* which requires large memory density and high bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes an

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1Gb DDR3 SDRAM Hynix Semiconductor
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