Datasheet Details
- Part number
- HY27UA1G1M
- Manufacturer
- Hynix Semiconductor
- File Size
- 781.84 KB
- Datasheet
- HY27UA1G1M_HynixSemiconductor.pdf
- Description
- 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UA1G1M Description
HY27UA(08/16)1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Mem.
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 4) Add the description of System Interface.
HY27UA1G1M Applications
* FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities
STATUS REGISTER ELECTRONIC SIGNATURE
SUPPLY VOLTAGE
Sequential Row Read Option
: HY27UAXX1G1M
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- 3.3V device: VCC = 2.7
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