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HY5RS573225F - 256 GDDR3 SDRAM

Hynix Semiconductor

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Datasheet Details

Part number: HY5RS573225F
Manufacturer: Hynix Semiconductor
File Size: 1.29 MB
Datasheet: HY5RS573225F_HynixSemiconductor.pdf
Description: 256 GDDR3 SDRAM

HY5RS573225F Product details

Description

and is subject to change without notice.

Features

VDD=1.8V ± 0.1V, VDDQ=1.8V ± 0.1V Single ended READ Strobe (RDQS) per byte Single ended WRITE Strobe (WDQS) per byte Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Calibrated output drive Differential clock inputs (CK and CK#) Commands entered on each positive CK edge RDQS edge-aligned with data for READs; with WDQS center-aligned with data for WRITEs Four interna.

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