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ICPB1005 - Discrete Power GaN HEMT

Description

The ICPB1005 is a GaN on SiC discrete HEMT that operates from DC-14GHz.

The design is optimized for power and efficiency using field plate technology.

Features

  • Frequency Range DC-14GHz.
  • 45.5dBm Nominal P3dB Pulsed.
  • Maximum PAE at 6GHz of 70%.
  • 18dB Linear Gain at 6GHz.
  • Drain Bias 28V.
  • Technology: GaN on SiC.
  • Lead-free and RoHS compliant.
  • Chip Dimensions: 0.824 x 1.44 x 0.10mm.

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Datasheet preview – ICPB1005

Datasheet Details

Part number ICPB1005
Manufacturer ICONIC RF
File Size 2.48 MB
Description Discrete Power GaN HEMT
Datasheet download datasheet ICPB1005 Datasheet
Additional preview pages of the ICPB1005 datasheet.

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Full PDF Text Transcription

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ICPB1005 | Discrete Power GaN HEMT 25 Watt Features • Frequency Range DC-14GHz • 45.5dBm Nominal P3dB Pulsed • Maximum PAE at 6GHz of 70% • 18dB Linear Gain at 6GHz • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.824 x 1.44 x 0.10mm Applications • Aerospace & Defense • Broadband Wireless Image Description The ICPB1005 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width=100uS, Duty cycle=10% Frequency GHz 3 Typical 6 10 14 Output Power P3dB dBm 45.3 45.5 45.5 45.6 Bias Current mA 100 100 100 100 PAE @ P3dB % Gain @ P3dB dB 74.6 21 70.2 14.
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