ICPB1005

Discrete Power GaN HEMT

ICPB1005 Features

* Frequency Range DC-14GHz

* 45.5dBm Nominal P3dB Pulsed

* Maximum PAE at 6GHz of 70%

* 18dB Linear Gain at 6GHz

* Drain Bias 28V

* Technology: GaN on SiC

* Lead-free and RoHS compliant

* Chip Dimensions: 0.824 x 1.44 x 0.10mm Applicati

ICPB1005 General Description

The ICPB1005 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width=100uS, Duty cycle=10% Frequency GHz 3 Typical 6 1.

ICPB1005 Datasheet (2.48 MB)

ICPB1005 Datasheet Preview — Preview of ICPB1005 PDF

Datasheet Details

Part number:

ICPB1005

Manufacturer:

ICONIC RF

File Size:

2.48 MB

Description:

Discrete power gan hemt.

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ICPB1005 Discrete Power GaN HEMT ICONIC RF

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ICPB1005 Features

ICPB1005 General Description

Datasheet Details

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Description:

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