ICPB1005 Datasheet Discrete Power GaN HEMT

Manufacturer: ICONIC RF

Overview: ICPB1005 | Discrete Power GaN HEMT 25 Watt.

ICPB1005 discrete power gan hemt by ICONIC RF - Datasheet Preview

Datasheet Details

Part number	ICPB1005
Manufacturer	ICONIC RF
File Size	2.48 MB
Description	Discrete Power GaN HEMT
Download	ICPB1005 Download (PDF)

General Description

The ICPB1005 is a GaN on SiC discrete HEMT that operates from DC-14GHz.

The design is optimized for power and efficiency using field plate technology.

RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width=100uS, Duty cycle=10% Frequency GHz 3 Typical 6 10 14 Output Power P3dB dBm 45.3 45.5 45.5 45.6 Bias Current mA 100 100 100 100 PAE @ P3dB % Gain @ P3dB dB 74.6 21 70.2 14.7 64.1 56.6 10.3 6.4 Recommended operating conditions Absolute Maximum Ratings Drain Voltage (VDG) Drain Quiescent Current (ID) Drain current RF Drive (ID) Gate Voltage (VG) Power Dissipation (CW) Channel Temperature (Max) 12-32 V 0.1-0.25A 2A -2.6V 28W 225°C Drain to Gate Voltage (VDG) Gate Voltage Range (VG) Gate Current (IG) Power Dissipation (CW) 80 V -20V to 0V -5 to 15mA 38W CW Input Power +37dBm Channel Temperature 275°C Storage Temperature -65°C to +150°C Exceeding any one or combination of these limits may cause permanent damage to this device.

Key Features

Frequency Range DC-14GHz.
45.5dBm Nominal P3dB Pulsed.
Maximum PAE at 6GHz of 70%.
18dB Linear Gain at 6GHz.
Drain Bias 28V.
Technology: GaN on SiC.
Lead-free and RoHS compliant.
Chip Dimensions: 0.824 x 1.44 x 0.10mm.

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