ICPB1005 Datasheet (ICONIC RF) - Discrete Power GaN HEMT

ICPB1005, Discrete Power GaN HEMT

The ICPB1005 is a GaN on SiC discrete HEMT that operates from DC-14GHz.

The design is optimized for power and efficiency using field plate technology.

RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width=100uS, Duty cycle=10% Frequency GHz 3 Typical 6 1

ICPB1005 Features

* Frequency Range DC-14GHz

* 45.5dBm Nominal P3dB Pulsed

* Maximum PAE at 6GHz of 70%

* 18dB Linear Gain at 6GHz

* Drain Bias 28V

* Technology: GaN on SiC

* Lead-free and RoHS compliant

* Chip Dimensions: 0.824 x 1.44 x 0.10mm Applicati