IDT71V25761 - (IDT71V25761 / IDT71V25781) Synchronous SRAMs
The IDT71V25761/781 are high-speed SRAMs organized as 128K x 36/256K x 18.
The IDT71V25761/781 SRAMs contain write, data, address and control registers.
Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.
The burst m
IDT71V25761 Features
* 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial:
* 200MHz 3.1ns clock access time Commercial and Industrial:
* 183MHz 3.3ns clock access time
* 166MHz 3.5ns clock access time LBO input selects interleaved or linear burst mode Self-timed write
