IDT71V2576SA - 128K X 36/ 256K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Pipelined Outputs/ Burst Counter/ Single Cycle Deselect
The IDT71V2576/78 are high-speed SRAMs organized as 128K x 36/256K x 18.
The IDT71V2576/78 SRAMs contain write, data, address and control registers.
Internal logic allows the SRAM to generate a selftimed write based upon a decision which can be left until the end of the write cycle.
The burst mode f
IDT71V2576SA Features
* 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial and Industrial:
* 150MHz 3.8ns clock access time
* 133MHz 4.2ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write ena
