Part number: 2N0609
Manufacturer: INCHANGE
File Size: 244.38KB
Download: 📄 Datasheet
Description: N-Channel MOSFET
Part number: 2N0609
Manufacturer: INCHANGE
File Size: 244.38KB
Download: 📄 Datasheet
Description: N-Channel MOSFET
*Static drain-source on-resistance:
RDS(on)≤9.1mΩ
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
Image gallery
TAGS
📁 Related Datasheet
2N0612 - N-Channel Power MOSFET
(Infineon)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
SPP77N06S2-12 SPB77N06.
2N06H5 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem.
2N06L05 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175.
2N06L13 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
2N06L23 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
2N06L64 - N-Channel MOSFET
(VBsemi)
2N06L64-VB
2N06L64-VB Datasheet
N-Channel 6 0-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
60
0.025 at VGS = 10 V
0.030 at VGS = 4.5 V
I.
2N03L05 - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resi.
2N03L20 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
2N04H4 - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
P- TO262 -3-1
SPI80N0.
2N0807 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating.
