2N06H5 Datasheet, power-transistor equivalent, Infineon

2N06H5 Features and benefits

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📁 Related Datasheet

2N0609 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.1mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for.

2N0612 - N-Channel Power MOSFET (Infineon)
OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated SPP77N06S2-12 SPB77N06.

2N06L05 - Power-Transistor (Infineon)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175.

2N06L13 - Power-Transistor (Infineon)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.

2N06L23 - Power-Transistor (Infineon)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.

2N06L64 - N-Channel MOSFET (VBsemi)
2N06L64-VB 2N06L64-VB Datasheet N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V I.

2N03L05 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resi.

2N03L20 - Power-Transistor (Infineon)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.

2N04H4 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO262 -3-1 SPI80N0.

2N0807 - Power-Transistor (Infineon)
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating.