Part number:
2N0612
Manufacturer:
File Size:
311.36kb
Download:
Description:
N-channel power mosfet.
PDF File Details
2N0612
311.36kb
N-channel power mosfet.
📁 Related Datasheet
2N0612 - N-Channel MOSFET
(VBsemi)
2N0612-VB TO220
2N0612-VB TO220 Datasheet
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60
0.011 at VGS = 10 V
0.013 at VGS =.
2N0609 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.1mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for.
2N06H5 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem.
2N06L05 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175.
2N06L13 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
2N06L13 - N-Channel MOSFET
(VBsemi)
2N06L13-VB
2N06L13-VB Datasheet
N-Channel 6 0-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
60
0.025 at VGS = 10 V
0.030 at VGS = 4.5 V
I.
2N06L23 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
2N06L64 - N-Channel MOSFET
(VBsemi)
2N06L64-VB
2N06L64-VB Datasheet
N-Channel 6 0-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
60
0.025 at VGS = 10 V
0.030 at VGS = 4.5 V
I.
2N03L05 - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resi.
2N03L05 - TO220 N-Channel MOSFET
(VBsemi)
2N03L05-VB TO220
2N03L05-VB TO220 Datasheet
N-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) ().
