Part number:
2N0807
Manufacturer:
File Size:
160.17 KB
Description:
Power-transistor.
* N-channel - Enhancement mode
* Automotive AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* Green package (lead free) PG-TO263-3-2
* Ultra low Rds(on)
* 100% Avalanche tested IPB80N08S2-07 IPP80N08S2-07,
2N0807
160.17 KB
Power-transistor.
📁 Related Datasheet
2N08L07 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated
SPP80N08.
2N03L05 - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resi.
2N03L05 - TO220 N-Channel MOSFET
(VBsemi)
2N03L05-VB TO220
2N03L05-VB TO220 Datasheet
N-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) ().
2N03L20 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
2N04H4 - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
P- TO262 -3-1
SPI80N0.
2N0609 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.1mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for.
2N0612 - N-Channel Power MOSFET
(Infineon)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
SPP77N06S2-12 SPB77N06.
2N0612 - N-Channel MOSFET
(VBsemi)
2N0612-VB TO220
2N0612-VB TO220 Datasheet
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60
0.011 at VGS = 10 V
0.013 at VGS =.