Infineon manufacturer logo Part number: 2N06L05 Manufacturer: Infineon ↗ File Size: 320.48 KB Download: 📄 Datasheet Description: Power-transistor.
2N06L13 Datasheet PDF 2N06L13, Infineon OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
2N06L13 Datasheet PDF 2N06L13, VBsemi 2N06L13-VB 2N06L13-VB Datasheet N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V I.
2N06L23 Datasheet PDF 2N06L23, Infineon OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
2N06L64 Datasheet PDF 2N06L64, VBsemi 2N06L64-VB 2N06L64-VB Datasheet N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V I.
2N0609 Datasheet PDF 2N0609, INCHANGE isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.1mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for.
2N0612 Datasheet PDF 2N0612, Infineon OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated SPP77N06S2-12 SPB77N06.
2N0612 Datasheet PDF 2N0612, VBsemi 2N0612-VB TO220 2N0612-VB TO220 Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.011 at VGS = 10 V 0.013 at VGS =.
2N06H5 Datasheet PDF 2N06H5, Infineon OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem.
