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2N3879 NPN Transistor

2N3879 Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. Low Collector-Emitter Saturation Voltage. 100% avalanche tested. Minimum Lot-to-Lot variations for rob.

2N3879 Applications

* Designed for high speed switching and linear- amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A PC Co

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Datasheet Details

Part number
2N3879
Manufacturer
INCHANGE
File Size
181.47 KB
Datasheet
2N3879-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2N3879-like datasheet