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2N3055 - NPN Transistor

General Description

Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJ2955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

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Part Number Description Manufacturer
2N3055 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics
2N3055 NPN POWER SILICON TRANSISTOR Microsemi Corporation
2N3055 COMPLEMENTARY SILICON POWER TRANSISTORS CENTRAL SEMICONDUCTOR
2N3055 NPN Power Silicon Transistor VPT
2N3055 Silicon NPN Power Transistors SavantIC

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.