Datasheet4U.com - 2N3055

2N3055 Datasheet, transistor equivalent, INCHANGE

Page 1 of 2N3055 Page 2 of 2N3055 Page 3 of 2N3055
  • Preview is limited to a maximum of three pages.

PDF File Details

Part number: 2N3055

Manufacturer: INCHANGE

File Size: 208.18KB

Download: 📄 Datasheet

Description: NPN Transistor

📥 Download PDF (208.18KB) Datasheet Preview: 2N3055

PDF File Details

Part number: 2N3055

Manufacturer: INCHANGE

File Size: 208.18KB

Download: 📄 Datasheet

Description: NPN Transistor

2N3055 Application


*Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

2N3055 Description


*Excellent Safe Operating Area
*DC Current Gain-hFE=20-70@IC = 4A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A
*Complement to Type MJ2955
*Minimum Lot-to-Lot variations for robust device performance and r.

Image gallery

Page 1 of 2N3055 Page 2 of 2N3055 Page 3 of 2N3055

TAGS

2N3055
NPN
Transistor
INCHANGE

📁 Related Datasheet

2N3053 - MEDIUM POWER SILICON NPN PLANAR TRANSISTOR (Seme LAB)
2N3053 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR 4.19 .

2N3053A - NPN SILICON PLANAR TRANSISTOR (CDIL)
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal.

2N3054 - NPN SILICON POWER TRANSISTOR (Central Semiconductor Corp)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N3054A - NPN POWER TRANSISTOR (Seme LAB)
2N3054A MECHANICAL DATA Dimensions in mm NPN POWER TRANSISTOR IN A HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) .

2N3055A - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementary t.

2N3055AG - Complementary Silicon High-Power Transistors (ON Semiconductor)
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed fo.

2N3055B - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=70-140 @IC = 4A ·Collector-Emitter Saturation Voltag.

2N3055E - Bipolar NPN Device (Semelab Plc)
( DataSheet : www..com ) 2N3055E Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135).

2N3055ESMD - Bipolar NPN Device (Semelab Plc)
( DataSheet : www..com ) 2N3055ESMD Dimensions in mm (inches). 0.89 (0.035) min. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 3.60.

2N3055G - Complementary Silicon Power Transistors (ON Semiconductor)
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−pur.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts