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2N5108 - Silicon NPN Power Transistor

2N5108 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5108 .
High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA. Low Saturation Voltage. Good Linearity of hFE. Minimum.

2N5108 Applications

* Designed for general purpose Class C amplifier applications up to 1 GHz ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 55 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4 V IC Collector Current Collector Power Dissip

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Datasheet Details

Part number
2N5108
Manufacturer
INCHANGE
File Size
184.06 KB
Datasheet
2N5108-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
INCHANGE 2N5108-like datasheet