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2SB1272 PNP Transistor

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Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE=1000(Min)@ (VCE= -2V, IC= -1A). Minimum Lot-to-L.

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Datasheet Specifications

Part number
2SB1272
Manufacturer
INCHANGE
File Size
203.68 KB
Datasheet
2SB1272-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collecto

2SB1272 Distributors

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PNP Transistor INCHANGE
INCHANGE 2SB1272-like datasheet