Datasheet4U Logo Datasheet4U.com

2SB1225 - PNP Transistor

2SB1225 Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -5A). Large Current Capability and Wide ASO. Low collector-to-emitter saturation.

2SB1225 Applications

* Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collect

📥 Download Datasheet

Preview of 2SB1225 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1225
Manufacturer
INCHANGE
File Size
204.32 KB
Datasheet
2SB1225-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1220 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB1221 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB1223 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SB1224 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SB1226 - Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SB1227 - Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SB1228 - Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SB1229 - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

📌 All Tags

INCHANGE 2SB1225-like datasheet