2SB1225 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -5A). Large Current Capability and Wide ASO. Low collector-to-emitter saturation.

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Datasheet Specifications

Part number: 2SB1225
Manufacturer: INCHANGE
File Size: 204.32 KB
Datasheet: 2SB1225-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collect

2SB1225 Distributors

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2SB1225 PNP Transistor INCHANGE

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