Datasheet4U Logo Datasheet4U.com

2SB1253 PNP Transistor

2SB1253 Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1253 .
High DC Current Gain- : hFE= 5000(Min)@IC= -5A. Low-Collector Saturation Voltage- : VCE(sat)= -2. Complement to Type 2SD.

2SB1253 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak

📥 Download Datasheet

Preview of 2SB1253 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SB1253
Manufacturer
INCHANGE
File Size
187.46 KB
Datasheet
2SB1253-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1252 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SB1254 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1255 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1257 - Silicon PNP Transistor (Sanken electric)
  • 2SB1258 - Silicon PNP Transistor (Sanken electric)
  • 2SB1259 - Silicon PNP Transistor (Sanken electric)
  • 2SB1201 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1202 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1253-like datasheet