2SB1253 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1253 .
High DC Current Gain- : hFE= 5000(Min)@IC= -5A. Low-Collector Saturation Voltage- : VCE(sat)= -2. Complement to Type 2SD.

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Datasheet Specifications

Part number: 2SB1253
Manufacturer: INCHANGE
File Size: 187.46 KB
Datasheet: 2SB1253-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak

2SB1253 Distributors

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2SB1253 PNP Transistor INCHANGE

INCHANGE 2SB1253-like datasheet