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2SB1230 - PNP Transistor

2SB1230 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High Current Capability. Wide Area of Safe Operation. Complement to Type.

2SB1230 Applications

* Designed for motor drivers, converters and other general High-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Curr

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Datasheet Details

Part number
2SB1230
Manufacturer
INCHANGE
File Size
216.72 KB
Datasheet
2SB1230-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
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