2SB1238, 2SB1189 Datasheet - ROHM

2SB1238 Medium power transistor

2SB1238 Features

* 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.

* Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO

* 80 Collector-emitter voltage VCEO

* 80 Emitter-base voltage VEBO

Datasheet Details

2SB1238, 2SB1189

89.37 KB

Medium power transistor.

This datasheet PDF includes multiple part numbers: 2SB1238, 2SB1189.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

2SB1230 PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

2SB1230 SILICON POWER TRANSISTOR (SavantIC)

2SB1230 PNP Transistor (INCHANGE)

2SB1231 Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

2SB1231 PNP Transistor (INCHANGE)

2SB1232 Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

2SB1234 Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

2SB1235 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

TAGS

2SB1238 2SB1189 Medium power transistor ROHM

2SB1238 Distributor