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2SB1237 - Medium Power Transistor

Datasheet Summary

Features

  • w VCE(sat). VCE(sat) = 0.2V(Typ. ) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858.
  • Structure Epitaxial planar type PNP silicon transistor.
  • Dimensions (Unit : mm) 2SB1132 4.5 +0.2.
  • 0.1 1.6 +.
  • 0.1 1.5 +0.2.
  • 0.1 2SA1515S 4 +.
  • 0.2 2 +.
  • 0.2 3.
  • + 0.2 0.5.
  • + 0.1 3Min. +0.2.
  • 0.1 4.0.
  • + 0.3 (15Min. ) 2.5 1.0.
  • + 0.2 (1) (2) (3) 0.4 +.
  • 0.1 1.5 +.
  • 0.1 0.5 +.
  • 0.1 3.0.

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Datasheet Details

Part number 2SB1237
Manufacturer ROHM
File Size 169.34 KB
Description Medium Power Transistor
Datasheet download datasheet 2SB1237 Datasheet
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Full PDF Text Transcription

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Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1132 4.5 +0.2 −0.1 1.6 +− 0.1 1.5 +0.2 −0.1 2SA1515S 4 +− 0.2 2 +− 0.2 3 −+ 0.2 0.5 −+ 0.1 3Min. +0.2 −0.1 4.0 −+ 0.3 (15Min.) 2.5 1.0 −+ 0.2 (1) (2) (3) 0.4 +− 0.1 1.5 +− 0.1 0.5 +− 0.1 3.0 +− 0.2 0.4 0.1 1.5+− 0.1 0.4 +0.1 −0.05 5 0.45 +0.15 −0.05 2.5 +0.4 −0.1 (1) Base ROHM : MPT3 (2) Collector EIAJ : SC-62 (3) Emitter ∗Abbreviated symbol: BA (1) (2) (3) ROHM : SPT EIAJ : SC-72 2SB1237 6.8+− 0.2 2.5+− 0.2 0.5 0.45 +0.15 −0.05 (1) Emitter (2) Collector (3) Base 4.4 −+ 0.2 1.0 0.9 0.65Max.
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