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2SB1236 - Power Transistor

Datasheet Summary

Features

  • 1) High breakdown voltage. (BVCEO =.
  • 120V) 2) Low collector output capacitance. (Typ. 30pF at VCB =.
  • 10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO.
  • 120 Collector-emitter voltage VCEO.
  • 120 Emitter-base voltage VEBO.
  • 5 Collector current.
  • 1.5 IC.
  • 3 Collector power dissipation PC 1 Junction temperature Tj 150.

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Datasheet Details

Part number 2SB1236
Manufacturer ROHM
File Size 62.49 KB
Description Power Transistor
Datasheet download datasheet 2SB1236 Datasheet
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Transistors Power Transistor (−120V, −1.5A) 2SB1236 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −120 Collector-emitter voltage VCEO −120 Emitter-base voltage VEBO −5 Collector current −1.5 IC −3 Collector power dissipation PC 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw = 100ms ∗2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Unit V V V A (DC) ∗A (Pulse) 1 W ∗2 °C °C zExternal dimensions (Unit : mm) 6.8 2.5 1.0 0.9 14.5 4.4 0.65Max. 0.5 (1) (2) (3) 2.54 2.
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