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2SB1189 - Medium power transistor

ROHM

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Datasheet Details

Part number	2SB1189
Manufacturer	ROHM
File Size	89.37 KB
Description	Medium power transistor
Datasheet	2SB1189-ROHM.pdf

2SB1189 Product details

Features

High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO.
80 Collector-emitter voltage VCEO.
80 Emitter-base voltage VEBO.
5 Collector current IC.
0.7 Collector power dissipation 2SB1189 2SB1238 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg.
55 to +150 ∗1 When mounted on a 40×40×0.

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Published: Aug 5, 2017 |