2SB1231 Datasheet - INCHANGE

2SB1231, PNP Transistor

isc Silicon PNP Power Transistor 2SB1231 DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) *High Current Capability <

Applications

* Designed for motor drivers, converters and other general High-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Curr

2SB1231-INCHANGE.pdf