2SB1342 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor 2SB1342 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A). Complement to Ty.

📥 Download Datasheet

2SB1342 Datasheet Preview — Preview of 2SB1342 PDF

Datasheet Specifications

Part number: 2SB1342
Manufacturer: INCHANGE
File Size: 211.13 KB
Datasheet: 2SB1342-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Co

2SB1342 Distributors

📁 Related Datasheet

2SB1340 2SB1345 2SB1347 2SB1300 2SB1301 2SB1302

📌 All Tags

2SB1342 PNP Transistor INCHANGE

INCHANGE 2SB1342-like datasheet