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2SB1361 PNP Transistor

2SB1361 Description

isc Silicon PNP Power Transistor 2SB1361 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). Wide Area of Safe Operation. Complement to Type 2SD2052. Minimum Lot-to-.

2SB1361 Applications

* Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse C

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Datasheet Details

Part number
2SB1361
Manufacturer
INCHANGE
File Size
218.12 KB
Datasheet
2SB1361-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1361-like datasheet