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2SB1366 PNP Transistor

2SB1366 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Collector Power Dissipation- : PC= 25 W@ TC= 25℃. Low Collector Saturation Vo.

2SB1366 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous C

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Datasheet Details

Part number
2SB1366
Manufacturer
INCHANGE
File Size
209.21 KB
Datasheet
2SB1366-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1366-like datasheet