* 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°
2SB1361
Panasonic Semiconductor
51.37 KB
Silicon pnp transistor.
Power Transistors
2SB1361
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD2052
Unit: mm
q
q q q
16.2±0.5.
📁 Related Datasheet
2SB1361 - PNP Transistor
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isc Silicon PNP Power Transistor
2SB1361
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Comp.
2SB1361 - SILICON POWER TRANSISTOR
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Product Specification
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DESCRIPTION ·With TO-3PFa package ·Compleme.
2SB1362 - PNP Transistor
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isc Silicon PNP Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Comp.
2SB1362 - SILICON POWER TRANSISTOR
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DESCRIPTION ·With TO-3PN package ·Wide area.
2SB1366 - PNP Transistor
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isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 25 W@ TC.
2SB1366 - TRANSISTOR
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DESCRIPTION ·With TO-220F package ·Compleme.
2SB1367 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC.
